Project number: P02/02
Final scientific report
Project Title: Study of Ta, Zr, and Ti nitride films by NRA
LNGS Access period: May 2002 – October 2002
Group Leader: A. Pedro de Jesus: Centro De Fisics Nuclear da Universidade de Lisboa (Portugal)
Researchers: A. Pedro de Jesus, P. Ribeiro, N. Cruz, R. Parafita: Centro De Fisics Nuclear da Universidade de Lisboa (Portugal)
Delivered access (filled by TARI administration): 36 man-days
Final scientific report (filled by group leader):
The objectives of this project are:
1. Establish which of the following methods of TaN, TiN and ZrN film production, reactive magnetron sputtering and ion beam implantation, lead to more uniform and pure films with a correct 1:1 stoicheometry.
2. Relate film thickness, uniformity and impurity content with the potential existence of micro-pores and small cracks that limit the capacity for corrosion protection.
In order to achieve these goals, the work was pursued along the following lines:
1. Production of TiN and ZrN films by reactive magnetron sputtering and production of TaN, TiN and ZrN surface films by ion implantation, using the ion implanter of the Ion Beam Laboratory of ITN – Portugal.
2. Stoicheometry and film uniformity analysis by RBS (for samples with light substrates) and impurity content analysis by PIXE and PIGE, at the Ion Beam Laboratory of ITN – Portugal.
3. Surface structure analysis by AFM (Atomic Force Microscopy) and chemical analysis by X-ray diffraction.
4. Film uniformity analysis by NRA, profiling the 14N content by the 278 keV (p, ) resonance, and impurity content analysis by PIGE, at the LNGS - LUNA (400 kV accelerator) facility.
Data analysis made so far, on deposited films, allow us to draw the following conclusions:
a) Thin films with thickness around 20 g/cm2 do not form a stable and uniform nitride – X-ray diffraction does not show the peaks corresponding to the nitrides, although RBS analysis (fig. 1) indicate a correct 1:1 ratio between the metal and nitrogen.
b) NRA analysis made at LNGS show a uniform depth profile (fig.2) of most of the samples and an impurity content of B, C and O at the ppm level that can be assigned to the original metal.
Data analysis on implanted films is still going on.
The results obtained so far suggest the need to search for the thickness at which deposited nitrogen-metal films become nitride films, which we plan to undertake in the near future.
Publications (quote also planned or in preparation) :
A paper about this work under the title “Comparison between thin films of metal nitrides produced by reactive magnetron sputtering and ion beam implantation” was submitted to Journal of Applied Physics
Evaluation by USP (March 2003)
The aim of this study was to analyze the purity and uniformity of Nitrogen metal films to be used as target for studying 14N(p, )15O reactions at low energies. Substantial information on defining the optimal target has been obtained. Publication submitted (JAP).
LNGS Access period: May 2002 – October 2002
Group Leader: A. Pedro de Jesus: Centro De Fisics Nuclear da Universidade de Lisboa (Portugal)
Researchers: A. Pedro de Jesus, P. Ribeiro, N. Cruz, R. Parafita: Centro De Fisics Nuclear da Universidade de Lisboa (Portugal)
Delivered access (filled by TARI administration): 36 man-days
Final scientific report (filled by group leader):
The objectives of this project are:
1. Establish which of the following methods of TaN, TiN and ZrN film production, reactive magnetron sputtering and ion beam implantation, lead to more uniform and pure films with a correct 1:1 stoicheometry.
2. Relate film thickness, uniformity and impurity content with the potential existence of micro-pores and small cracks that limit the capacity for corrosion protection.
In order to achieve these goals, the work was pursued along the following lines:
1. Production of TiN and ZrN films by reactive magnetron sputtering and production of TaN, TiN and ZrN surface films by ion implantation, using the ion implanter of the Ion Beam Laboratory of ITN – Portugal.
2. Stoicheometry and film uniformity analysis by RBS (for samples with light substrates) and impurity content analysis by PIXE and PIGE, at the Ion Beam Laboratory of ITN – Portugal.
3. Surface structure analysis by AFM (Atomic Force Microscopy) and chemical analysis by X-ray diffraction.
4. Film uniformity analysis by NRA, profiling the 14N content by the 278 keV (p, ) resonance, and impurity content analysis by PIGE, at the LNGS - LUNA (400 kV accelerator) facility.
Data analysis made so far, on deposited films, allow us to draw the following conclusions:
a) Thin films with thickness around 20 g/cm2 do not form a stable and uniform nitride – X-ray diffraction does not show the peaks corresponding to the nitrides, although RBS analysis (fig. 1) indicate a correct 1:1 ratio between the metal and nitrogen.
b) NRA analysis made at LNGS show a uniform depth profile (fig.2) of most of the samples and an impurity content of B, C and O at the ppm level that can be assigned to the original metal.
Data analysis on implanted films is still going on.
The results obtained so far suggest the need to search for the thickness at which deposited nitrogen-metal films become nitride films, which we plan to undertake in the near future.
Publications (quote also planned or in preparation) :
A paper about this work under the title “Comparison between thin films of metal nitrides produced by reactive magnetron sputtering and ion beam implantation” was submitted to Journal of Applied Physics
Evaluation by USP (March 2003)
The aim of this study was to analyze the purity and uniformity of Nitrogen metal films to be used as target for studying 14N(p, )15O reactions at low energies. Substantial information on defining the optimal target has been obtained. Publication submitted (JAP).